In the present work, full composition range of Ni_xCd_1-xO thin films, from Cadmium oxide to Nickel oxide are prepared with sol-gel chemical synthesis route on corning glass substrates. The Fourier transform infrared spectra provide a direct indication of compositional dependence for different vibrational modes with increasing Ni doping. The microscopy images reflect the reduced crystallinity and closely packed morphology with increasing Ni doping which endorses the changes reflected in electronic structure. The O K edge, soft X-ray absorption spectra (XAS) for thin films indicate a clear evidence of e_g and t_2g sub band splitting and has been explained via crystal field splitting and three level band anti-crossing (BAC) interaction phenomena. At higher doping fraction, the inhomogeneous electric field of neighboring ions surrounding the unfilled Ni 3d level results in rupturing of L$-$S coupling and further crystal field splitting. The BAC interaction brings about partially unoccupied localized Ni 3d and empty d acceptor levels above conduction band minima (CBM). As saturated Fermi level goes below CBM with increasing Ni doping, transitions to antibonding orbital [e_g(${\pi }^{*}$) and t_2g(${\sigma }^{*}$)] with finite energy difference, is reflected as separated e_g-t_2g peaks in XAS spectra. On the other hand, extended X-ray absorption fine structure for Ni K edge fitting provides a complete information for nearest (Ni-O) and next nearest (Ni-Ni) neighbor bond length.

在目前的工作中，通过溶胶-凝胶化学合成路线在康宁玻璃基板上制备了从氧化镉到氧化镍的全成分范围的 Ni _x Cd _1-x O 薄膜。傅里叶变换红外光谱提供了随着 Ni 掺杂增加的不同振动模式的成分依赖性的直接指示。显微图像反映了随着 Ni 掺杂的增加，结晶度降低和紧密堆积的形态，这证实了电子结构中反映的变化。薄膜的 O K边缘软 X 射线吸收光谱 (XAS) 表明 e _g和 t _2g的明显证据子带分裂，并通过晶体场分裂和三能级带反交叉（BAC）相互作用现象进行了解释。在较高的掺杂分数下，未填充的 Ni 3 d能级周围相邻离子的不均匀电场导致 L 的破裂$-$S 耦合和进一步的晶体场分裂。BAC 相互作用导致部分未占据的局部 Ni 3 d和空d受体水平高于导带最小值 (CBM)。随着饱和费米能级随着 Ni 掺杂的增加而低于 CBM，过渡到反键轨道 [e _g (${\pi }^{*}$) 和 t _2g (${\sigma }^{*}$)] 具有有限的能量差异，在 XAS 光谱中反映为分离的 e _g -t _2g峰。另一方面，用于 Ni K边缘拟合的扩展 X 射线吸收精细结构提供了最近 (Ni-O) 和次最近 (Ni-Ni) 相邻键长的完整信息。