Over the last sixty years, the scaling of silicon-based complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have promoted the rapid development of microelectronic technology. However, the development of Si CMOS technology is currently subject to serious challenges from various aspects such as physics limit, cost, and power consumption, and is becoming increasingly difficult. Material innovation is exerting an ever-greater role in the integrated circuit design. By looking for thinner semiconductor materials with higher mobility as the active layer to construct smaller and higher-performance transistors, it is possible to further stimulate transistors and integrated circuits on performance, density, power dissipation, and functions. In 1991, Iijima discovered carbon nanotubes (CNTs). Due to its excellent electrical properties and intrinsic nano-scale size, CNT has been considered by academia and industry to have great potential to replace silicon materials in the future for the extremely scaled technology nodes or novel electronic applications. This paper reviews the latest advancements in CNT-based electronics research. Finally, the challenges and pathways for nanotube transistors to transition into commercial applications are discussed.

在过去的 60 年中，硅基互补金属氧化物半导体 (CMOS) 场效应晶体管 (FET) 的缩放促进了微电子技术的快速发展。然而，目前Si CMOS技术的发展受到物理极限、成本、功耗等多方面的严峻挑战，难度越来越大。材料创新在集成电路设计中发挥着越来越大的作用。通过寻找具有更高迁移率的更薄半导体材料作为有源层来构建更小、更高性能的晶体管，可以进一步刺激晶体管和集成电路的性能、密度、功耗和功能。1991 年，饭岛发现了碳纳米管 (CNTs)。由于其优异的电性能和固有的纳米级尺寸，碳纳米管被学术界和工业界认为在未来具有巨大潜力来替代硅材料，用于极大规模的技术节点或新型电子应用。本文回顾了基于 CNT 的电子学研究的最新进展。最后，讨论了纳米管晶体管过渡到商业应用的挑战和途径。