This article presents the analytical modeling of the subthreshold drain current of junctionless channel-modulated double-material double-gate (\( JL \)-\( CM \)-\( DMDG \)) MOSFET. The first time under the full depletion mode, the center channel potential and threshold voltage (\( {V}_{TH} \)) have been derived. The center channel potential has been produced by solving the 2D Passion’s equation with ideal boundary conditions. The behavior of threshold voltage (\( {V}_{TH} \)) and subthreshold drain current of the \( JL \)-\( CM \)-\( DMDG \) MOSFET by varying physical device parameters such as doping concentration (\( {N}_{Dn} \)), channel thickness (\( {t}_{Si} \)), and channel length ratio (\( {\mathrm{L}}_1 \):\( {\mathrm{L}}_2 \)) has been examined. The drain-induced barrier-lowering (\( DIBL \)) as an indicator of short-channel effects has been studied. The model results have been verified with simulation data extracted from a 2D ATLAS TCAD simulator.

本文介绍了无结通道调制双材料双栅极 ( \( JL \) - \( CM \) - \( DMDG \) ) MOSFET的亚阈值漏极电流的分析建模。首次在全耗尽模式下，导出了中心通道电位和阈值电压（\( {V}_{TH} \)）。中心通道电位是通过用理想边界条件求解 2D Passion 方程产生的。阈值电压 ( \( {V}_{TH} \) ) 和\( JL \) - \( CM \) - \( DMDG \) MOSFET 的亚阈值漏极电流的行为通过改变掺杂等物理器件参数专注 （\( {N}_{Dn} \) )、通道厚度 ( \( {t}_{Si} \) ) 和通道长度比 ( \( {\mathrm{L}}_1 \) : \( { \mathrm{L}}_2 \) ) 已被检查。已经研究了漏极引起的势垒降低（\（DIBL\））作为短沟道效应的指标。模型结果已经用从 2D ATLAS TCAD 模拟器中提取的模拟数据进行了验证。