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Solid-phase epitaxial growth of the correlated-electron transparent conducting oxideSrVO3
Physical Review Materials ( IF 3.4 ) Pub Date : 2021-08-23 , DOI: 10.1103/physrevmaterials.5.083402 Samuel D. Marks 1 , Lin Lin 1 , Peng Zuo 1 , Patrick J. Strohbeen 1 , Ryan Jacobs 1 , Dongxue Du 1 , Jason R. Waldvogel 1 , Rui Liu 1 , Donald E. Savage 1 , John H. Booske 2 , Jason K. Kawasaki 1 , Susan E. Babcock 1 , Dane Morgan 1 , Paul G. Evans 1
Physical Review Materials ( IF 3.4 ) Pub Date : 2021-08-23 , DOI: 10.1103/physrevmaterials.5.083402 Samuel D. Marks 1 , Lin Lin 1 , Peng Zuo 1 , Patrick J. Strohbeen 1 , Ryan Jacobs 1 , Dongxue Du 1 , Jason R. Waldvogel 1 , Rui Liu 1 , Donald E. Savage 1 , John H. Booske 2 , Jason K. Kawasaki 1 , Susan E. Babcock 1 , Dane Morgan 1 , Paul G. Evans 1
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thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial films crystallized on using SPE exhibit room-temperature resistivities as low as and , residual resistivity ratios of 2.0 and 3.8, and visible light transmission maxima of 0.89 and 0.52 for film thicknesses of 16 and 60 nm, respectively. layers were deposited at room temperature using radiofrequency sputtering in an amorphous form and subsequently crystallized by heating in a controlled gas environment. The lattice parameters and mosaic angular width of x-ray reflections from the crystallized films are consistent with partial relaxation of the strain resulting from the epitaxial mismatch between and . A reflection high-energy electron diffraction study of the kinetics of SPE indicates that crystallization occurs via the thermally activated propagation of the crystalline/amorphous interface, like SPE phenomena in other perovskite oxides. Thermodynamic calculations based on density functional theory predict the temperature and oxygen partial pressure conditions required to produce the phase and are consistent with the experiments. The separate control of deposition and crystallization conditions in SPE presents possibilities for the crystallization of transparent conductors in complex geometries and over large areas.
中文翻译:
相关电子透明导电氧化物SrVO3的固相外延生长
使用固相外延 (SPE) 从非晶层结晶出具有高品质因数的薄膜,可用作透明导体。外延 结晶的薄膜 使用 SPE 表现出的室温电阻率低至 和 ,对于 16 和 60 nm 的薄膜厚度,残余电阻率分别为 2.0 和 3.8,可见光透射最大值分别为 0.89 和 0.52。 层在室温下使用射频溅射以非晶形式沉积,随后通过在受控气体环境中加热结晶。来自结晶薄膜的 X 射线反射的晶格参数和镶嵌角宽度与由外延失配引起的应变的部分弛豫一致。 和 . SPE 动力学的反射高能电子衍射研究表明,结晶是通过结晶/非晶界面的热激活传播发生的,就像其他钙钛矿氧化物中的 SPE 现象一样。基于密度泛函理论的热力学计算预测了生产所需的温度和氧分压条件。相,与实验一致。SPE 中沉积和结晶条件的单独控制为复杂几何形状和大面积透明导体的结晶提供了可能性。
更新日期:2021-08-23
中文翻译:
相关电子透明导电氧化物SrVO3的固相外延生长
使用固相外延 (SPE) 从非晶层结晶出具有高品质因数的薄膜,可用作透明导体。外延 结晶的薄膜 使用 SPE 表现出的室温电阻率低至 和 ,对于 16 和 60 nm 的薄膜厚度,残余电阻率分别为 2.0 和 3.8,可见光透射最大值分别为 0.89 和 0.52。 层在室温下使用射频溅射以非晶形式沉积,随后通过在受控气体环境中加热结晶。来自结晶薄膜的 X 射线反射的晶格参数和镶嵌角宽度与由外延失配引起的应变的部分弛豫一致。 和 . SPE 动力学的反射高能电子衍射研究表明,结晶是通过结晶/非晶界面的热激活传播发生的,就像其他钙钛矿氧化物中的 SPE 现象一样。基于密度泛函理论的热力学计算预测了生产所需的温度和氧分压条件。相,与实验一致。SPE 中沉积和结晶条件的单独控制为复杂几何形状和大面积透明导体的结晶提供了可能性。