In the present study, new process of N₂ pre-treated (NP) Si3N4 passivation on Al0.3Ga0.7N/AlN/GaN HEMTs (High Electron Mobility Transistors)has been developed and its impact on DC and RF performance of HEMTs has been investigated. Additionaly, this study reveals the beneficial effects of NP passivation on RF performance in comparison to w/o NP passivation. The physical role of NP passivation is explained through extraction of small signal model parameters.NP Si3N4 passivation layer was deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and was analysed using analytical techniques like X-ray Photoelectron Spectroscopy (XPS), High Resolution X-Ray Diffraction (HR-XRD), Ellipsometry & Fourier Transform Infrared Spectroscopy (FTIR). After NP passivation, devices exhibited better DC/RF characteristics. For a device, with gate-length of 0.25 μm, drain current density (Idss) increased from 747 to 876 mA/mm and the peak transconductance(g_m) increased from 192 to 236 mS/mm.The cut-off frequency (Ft) increased from 28.6 to 49.5GHz, maximum frequency oscillation (Fmax)increased from 27.2 to 42.5GHz &maximum available gain @ 8GHz increased from 11 dB to 15 dB for w/o NP passivation and with NP passivation respectively.

在本研究中，N _{2 的}新工艺已经开发了 Al0.3Ga0.7N/AlN/GaN HEMT（高电子迁移率晶体管）上的预处理 (NP) Si3N4 钝化，并研究了其对 HEMT 的 DC 和 RF 性能的影响。此外，该研究揭示了与无 NP 钝化相比，NP 钝化对 RF 性能的有益影响。通过提取小信号模型参数来解释 NP 钝化的物理作用。 NP Si3N4 钝化层使用等离子体增强化学气相沉积 (PECVD) 技术沉积，并使用 X 射线光电子能谱 (XPS)、高分辨率等分析技术进行分析X 射线衍射 (HR-XRD)、椭偏仪和傅立叶变换红外光谱 (FTIR)。NP钝化后，器件表现出更好的DC/RF特性。对于栅极长度为 0.25 μm 的器件，_m ) 从 192 增加到 236 mS/mm。截止频率 (Ft) 从 28.6 增加到 49.5GHz，最大频率振荡 (Fmax) 从 27.2 增加到 42.5GHz & 8GHz 时的最大可用增益从 11 dB 增加到 15 dB分别用于无 NP 钝化和有 NP 钝化。