Temperature drift restricts the measurement accuracy and application fields of high temperature pressure sensors. In this work, a theoretical model of temperature characteristics in SiC piezoresistive pressure sensor was developed to analyze the influence factors of temperature zero drift, including temperature dependence of resistivity and thermal expansion deformation of diaphragm. Then the effect of various size combinations of piezoresistors on the zero-point output of pressure sensors was investigated through the finite element method and an asymmetric Wheatstone bridge was proposed to effectively compensate for temperature zero drift. The size of transverse piezoresistor should be larger than that of longitudinal piezoresistor when the resistances are equal. Finally, the validity of the asymmetric Wheatstone bridge in sensor model with manufacturing errors was further evaluated. The above research results are significant for the structural design and performance optimization of SiC piezoresistive pressure sensors.

温度漂移限制了高温压力传感器的测量精度和应用领域。在这项工作中，建立了碳化硅压阻式压力传感器温度特性的理论模型，分析了温度零漂的影响因素，包括电阻率的温度依赖性和隔膜的热膨胀变形。然后通过有限元方法研究了压敏电阻器的各种尺寸组合对压力传感器零点输出的影响，并提出了一种非对称惠斯通电桥来有效补偿温度零漂。当电阻相等时，横向压敏电阻的尺寸应大于纵向压敏电阻的尺寸。最后，进一步评估了具有制造误差的传感器模型中非对称惠斯通电桥的有效性。上述研究成果对碳化硅压阻式压力传感器的结构设计和性能优化具有重要意义。