A comparative study of the formation of defects on the surface of growing and formed lithium fluoride films under irradiation with low-energy electrons by total current spectroscopy has been carried out. It is shown that, in the post case, the aggregation of F₂⁺-, F₂-, F₃-, and X-centres proceeds by coalescence of F-centres. In situ process, due to the renewal of the surface with a new layer, large defects are not observed, but a high concentration of laser color centers is formed. Electron irradiation and negative potential treatment during film growth can be used as a technology for producing epitaxial films with the (111) orientation.

中文翻译：

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电子辐照对原位表面缺陷形成和后薄膜 LiF/Si(111) 沉积的比较

通过全电流光谱对低能电子辐照下生长和形成的氟化锂薄膜表面缺陷的形成进行了比较研究。结果表明，在后例中，F ₂ ⁺ -、F ₂ -、F ₃ - 和X 中心的聚集是通过F 中心的合并进行的。原位工艺，由于表面更新了一层新的，没有观察到大的缺陷，而是形成了高浓度的激光色心。薄膜生长过程中的电子辐照和负电位处理可用作生产具有（111）取向的外延薄膜的技术。