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Benzothienobenzothiophene-Based Organic Charge Transfer Complex and Carbon Nanotube Composites for p-Type and n-Type Thermoelectric Materials and Generators
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2021-08-20 , DOI: 10.1002/aelm.202100557
Shihui Qin 1 , Jingjuan Tan 1 , Jinfeng Qin 2 , Jiye Luo 2 , Jiaoying Jin 1 , Si Huang 1 , Lei Wang 1 , Danqing Liu 1
Affiliation  

Organic charge transfer complexes (CTCs) or electron donor–acceptor complexes have been intensively studied as organic semiconductors or organic conductors in organic electronics. Herein, the composite of CTCs and single-walled carbon nanotubes (SWCNTs) is studied as both p-type and n-type thermoelectric materials for flexible thermoelectric generators. CTCs are formed by [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives with different side chains as electron donors and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as electron acceptors. The thermoelectric properties of the composites as well as the effect of side chains in BTBT derivatives are investigated. It is found that the PhBTBT–F4TCNQ/SWCNT composite film shows the highest p-type power factor of 244.3 µW m−1 K−2; while the C8BTBT–F4TCNQ/SWCNT composite film exhibits the highest n-type power factor of 105.1 µW m−1 K−2. The thermoelectric module based on five p–n junctions of C8BTBT–F4TCNQ/SWCNT exhibits the highest output voltage of 13.1 mV and output power of 340 nW under a 38 K temperature gradient. This device performance is mainly generated from the moderate carrier concentrations and low film defects in the n-type C8BTBT–F4TCNQ/SWCNT composite film.

中文翻译:

用于 p 型和 n 型热电材料和发生器的基于苯并噻吩并苯并噻吩的有机电荷转移复合物和碳纳米管复合材料

有机电荷转移复合物 (CTC) 或电子供体-受体复合物作为有机半导体或有机电子中的有机导体得到了深入研究。在此,研究了 CTC 和单壁碳纳米管 (SWCNT) 的复合材料作为柔性热电发电机的 p 型和 n 型热电材料。CTC 由具有不同侧链作为电子供体的 [1] 苯并噻吩并 [3,2- b ][1] 苯并噻吩 (BTBT) 衍生物和 2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷形成(F 4 TCNQ) 作为电子受体。研究了复合材料的热电性能以及侧链对 BTBT 衍生物的影响。发现 PhBTBT-F 4TCNQ/SWCNT 复合薄膜显示出最高的 p 型功率因数,为 244.3 µW m -1 K -2;而 C8BTBT–F 4 TCNQ/SWCNT 复合膜表现出最高的 n 型功率因数,为 105.1 µW m -1 K -2。基于 C8BTBT–F 4 TCNQ/SWCNT 的五个 p-n 结的热电模块在 38 K 温度梯度下表现出 13.1 mV 的最高输出电压和 340 nW 的输出功率。这种器件性能主要来自 n 型 C8BTBT-F 4 TCNQ/SWCNT 复合膜中的中等载流子浓度和低膜缺陷。
更新日期:2021-08-20
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