Some packaging technologies of electronic devices introduce compressive biaxial stress and variable vertical stress. In unipolar MOS devices, stress variations typically only linearly affect drain current via carrier mobility. Collector currents of bipolar devices are additionally affected by variations in intrinsic carrier concentration. This leads to increased variability of key device parameters in the compressive stress regime. Reducing package-induced compressive stress, or inducing tensile stress, should improve device variability due to local stress variations.

中文翻译：

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压缩双轴应力对高精度双极器件的负面影响

电子器件的一些封装技术引入了压缩双轴应力和可变垂直应力。在单极 MOS 器件中，应力变化通常仅通过载流子迁移率线性影响漏极电流。双极器件的集电极电流还受本征载流子浓度变化的影响。这导致压应力状态中关键器件参数的可变性增加。由于局部应力变化，减少封装引起的压缩应力或引起拉伸应力应该可以改善器件的可变性。