We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm ² are achieved for n ⁺ -POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO ² solar cell processing. In particular, for POLO ² -IBC cells, a lean process flow is facilitated.

中文翻译：

---

在氧化物结上喷墨印刷原位结构化和掺杂多晶硅

我们研究了液态硅油墨的喷墨打印以形成 原位掺杂和结构化钝化触点。墨水由溶剂中的新戊硅烷低聚物组成，并通过短暂的退火分解成非晶硅。通过在氧化物上的氧化硅，多晶硅印刷含硼和磷掺杂墨水（POLO）两个p型和n型的极性（POLO²）结形成和饱和电流密度低至5 FA /厘米 ²是实现了 n ⁺ -POLO 结。我们在叉指背接触 (IBC) 几何结构中执行结构化打印，实现了平均手指高度高达 103 nm 的发射极和基极手指。喷墨印刷的应用简化了 POLO 和 POLO ²太阳能电池的加工过程。特别是对于POLO ² -IBC 电池，促进了精益工艺流程。