We compare light and elevated temperature induced degradation (LeTID) in four different silicon substrates, namely p-type boron-doped and n-type phosphorus-doped mono-like Si and float zone silicon, and study the dependence of the degradation behaviors on silicon nitride (SiN _x ) film properties and dopant diffusions. The materials exhibit different degradation kinetics, but show a similar dependence on the SiN _x deposition conditions, correlating strongly with the Si-N bond density and the refractive index of the SiN _x films, measured using Fourier-transform infrared spectroscopy and ellipsometry. It is observed that the degradation severity is reduced by decreasing SiN _x deposition temperature and power, revealing a potential solution to mitigate LeTID. Moreover, p-type materials are found to generally suffer a higher degradation extent than their n-type counterparts. Our experimental results are consistent with LeTID depending on the hydrogen concentration in the Si bulk. This model can explain the larger degradation observed in the p-type Si wafers, the dependence of LeTID on the SiN _x films, and also the presence of heavily doped regions, all of which affect the diffusion of hydrogen and its final concentration in the bulk after firing.

中文翻译：

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光和高温引起的类单晶硅和浮区硅的降解：与材料类型、氮化硅薄膜和掺杂剂扩散的相关性

我们比较了四种不同硅衬底（即 p 型掺硼和 n 型掺磷单晶硅和浮区硅）中的光和高温诱导退化 (LeTID)，并研究了退化行为对硅的依赖性氮化物 (SiN _x ) 薄膜特性和掺杂剂扩散。材料表现出不同的降解动力学，但表现出对 SiN _x沉积条件的相似依赖性 ，与 Si-N 键密度和 SiN _x薄膜的折射率密切相关 ，使用傅立叶变换红外光谱和椭圆光度法测量。据观察，降低 SiN _x降低了降解的严重程度 沉积温度和功率，揭示了减轻 LeTID 的潜在解决方案。此外，发现 p 型材料通常比它们的 n 型对应物遭受更高的降解程度。我们的实验结果与 LeTID 一致，具体取决于 Si 体中的氢浓度。该模型可以解释在 p 型 Si 晶片中观察到的较大退化、LeTID 对 SiN _x薄膜的依赖性 以及重掺杂区域的存在，所有这些都会影响氢的扩散及其在体中的最终浓度开火后。