GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm ² in a GaInP/GaAs cell, an improvement of 0.9 mA/cm ² over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

中文翻译：

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D-HVPE 生长的改进串联电池的掺杂剂扩散控制

GaInP 顶部电池电流密度目前限制了 HVPE 生长的双结器件的性能，这在很大程度上是由于不需要的掺杂剂扩散。在这里，我们制定了缓解策略以降低来自正面接触和背面场的掺杂剂扩散。这些策略的成功应用导致GaInP/GaAs 电池的短路电流密度为 12.1 mA/cm ²，比我们之前最好的电池提高了 0.9 mA/cm ²。减少的 Se 扩散导致更薄的未钝化发射极，这会导致更高的串联电阻。尽管阻力增加，但我们的效率从 23.7% 提高到 24.8%。