This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic vapor phase epitaxy. By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber band gap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond 35% under the AM1.5g solar spectrum.

中文翻译：

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晶圆键合 III-V//Si 串联太阳能电池的中间电池开发

本文重点介绍两种 III-V 族半导体（AlGaAs 和 GaInAsP）的材料特性，以及它们在晶片键合 III-V//Si 三结太阳能电池中作为中间电池吸收材料的用途。为此，使用金属有机气相外延在 GaAs 晶片上外延晶格匹配地生长单结太阳能电池。通过优化生长温度和 V/III 比，我们可以将目标吸收带隙 1.50 eV 下的开路电压提高 100 mV。未来，这些结果将应用于两端 III-V//Si 三结太阳能电池，以将 AM1.5g 太阳光谱下的转换效率提高 35% 以上。