In the high-frequency ENDOR experiments, the hyperfine (HF) interaction between the unpaired electron of the shallow donor or shallow acceptor and the nuclear spins of the Coulombic center and the surrounding atoms is determined, which is then translated into the spin density of the electronic wave function at the various atomic positions. The results of studying the spatial distribution of wave functions for shallow donors in ZnO, AgCl, AlN, and SiC crystals, ZnO-based nanostructures, and shallow boron acceptors in SiC will be presented. The change of the electronic wave function of a shallow donor in ZnO quantum dots (QDs) when entering the regime of quantum confinement by using the nuclear as probes has been observed. The model, based on the effective mass approximation (EMA), that describes a 1s-like wave function with the Bohr radius of ~ 1.5 nm for distant shells was tested. The EMA does not yield an appropriate description of the electronic wave function when the radius of the QD is reduced below the Bohr radius. The direct reconstruction of the wave function of the intrinsic shallow electronic center (SEC) and self-trapped excitons in AgCl was presented. The SEC was suggested to be an electron that is shallowly trapped by two adjacent silver ions on a single cationic site (split-interstitial position), so-called “latent image” in silver halides. The shallowly trapped electron of the STE is shown to behave like a hydrogen 1s electron, centered on the Ag⁺ lattice position, with a Bohr radius r₀ = 1.51 nm that is in agreement with Bohr radius of SEC (r₀ = 1.66 nm). For SEC in AgBr, r₀ = 2.48 nm. It was demonstrated that dynamic nuclear polarization of nuclear spins due to hyperfine interactions with ligand nuclei can be achieved in ZnO (and based QDs) and AgCl by saturating the high-frequency EPR transition of a shallow donor at low temperatures corresponding to a high Boltzmann factor. Several types of shallow donors were indicated in AlN crystals: (i) affected by the DX-relaxation and (ii) with normal behavior. The strong HF interaction for light-induced SD in AlN support the assignment to the impurity in anionic sublattice (e.g. oxygen in N position). At the same time, a shallow donor with normal behavior can belong to Si or C in the Al position. The electronic structure of shallow donors and shallow acceptors in silicon carbide was investigated by the ENDOR method. The spin density of the N donor corresponding to the observed ENDOR lines was established to be p like in character and located mainly on the Si atoms for the k site in 4H-SiC, whereas for the three sites in 6H-SiC the spin density is s-like in character and located mainly on the C atoms. An explanation for the difference in the electronic wave function of the N donor in 4H-SiC and 6H-SiC can be found in the large difference in the band structure of the two polytypes and in the position of the minima in the Brillouin Zone. The electronic density for shallow B acceptor substituting Si in the k position is distributed in an ellipsoidal shape with the main symmetry axis making an angle of 70° with the c axis, i.e., along the direction of the B–C with main spin density.

在高频 ENDOR 实验中，确定浅供体或浅受体的未配对电子与库仑中心和周围原子的核自旋之间的超精细 (HF) 相互作用，然后将其转化为自旋密度不同原子位置的电子波函数。将介绍研究 ZnO、AgCl、AlN 和 SiC 晶体、ZnO 基纳米结构和 SiC 中的浅硼受体的波函数空间分布的结果。已经观察到当使用核作为探针进入量子限制状态时，ZnO 量子点 (QD) 中浅供体的电子波函数会发生变化。该模型基于有效质量近似 (EMA)，描述了一个类似 1s 的波函数，玻尔半径约为 1。对远处的壳进行了 5 nm 的测试。当 QD 的半径减小到玻尔半径以下时，EMA 不会产生对电子波函数的适当描述。介绍了 AgCl 中固有浅电子中心 (SEC) 和自陷激子的波函数的直接重建。SEC 被认为是一个电子，它被单个阳离子位点（分裂间隙位置）上的两个相邻银离子浅捕获，即卤化银中的“潜像”。STE 的浅捕获电子表现得像氢 1 介绍了 AgCl 中固有浅电子中心 (SEC) 和自陷激子的波函数的直接重建。SEC 被认为是一个电子，它被单个阳离子位点（分裂间隙位置）上的两个相邻银离子浅捕获，即卤化银中的“潜像”。STE 的浅捕获电子表现得像氢 1 介绍了 AgCl 中固有浅电子中心 (SEC) 和自陷激子的波函数的直接重建。SEC 被认为是一个电子，它被单个阳离子位点（分裂间隙位置）上的两个相邻银离子浅捕获，即卤化银中的“潜像”。STE 的浅捕获电子表现得像氢 1s电子，以 Ag ⁺晶格位置为中心，玻尔半径r ₀  = 1.51 nm，与 SEC 的玻尔半径 ( r ₀  = 1.66 nm) 一致。对于 AgBr 中的 SEC，r ₀ = 2.48 纳米。已经证明，通过在对应于高玻尔兹曼因子的低温下使浅供体的高频 EPR 跃迁饱和，可以在 ZnO（和基于 QD）和 AgCl 中实现由于与配体核的超精细相互作用而导致的核自旋的动态核极化. 在 AlN 晶体中显示了几种类型的浅供体：（i）受 DX 弛豫的影响和（ii）具有正常行为。AlN 中光诱导 SD 的强 HF 相互作用支持对阴离子亚晶格中的杂质（例如N 中的氧）的分配位置）。同时，具有正常行为的浅施主可以属于 Al 位置的 Si 或 C。采用ENDOR方法研究了碳化硅中浅施主和浅受主的电子结构。对应于观察到的 ENDOR 线的 N 供体的自旋密度被确定为p性质相似，主要位于 4H-SiC 中 k 位的 Si 原子上，而对于 6H-SiC 中的三个位点，自旋密度具有类似 s 的性质，主要位于 C 原子上。4H-SiC 和 6H-SiC 中 N 施主的电子波函数差异的解释可以在两种多型体的能带结构和布里渊区最小值的位置上找到很大差异。在k位置取代 Si 的浅 B 受体的电子密度呈椭圆形分布，主对称轴与 c 轴成 70°角，即沿 B-C 方向具有主自旋密度。