One of the essential components in this era of the Internet of Things (IoT) and wearable technologies, is a flexible and high performance resistive random access memory (ReRAM) device. In this paper, the authors propose a new copolymer-based ReRAM device that is realized using an initiated chemical vapor deposition (iCVD) process. The 7-nm-thick copolymer ReRAM device exhibits endurance properties as high as 10⁵ and switching power as low as 438 µW. The strong endurance of the copolymer-based ReRAM device originates from the properties of the robust poly-1,3,5-trivinyl-trimethyl-cyclotrisiloxane dielectric film, while its low on-current at the operating voltage is attributed to the properties of the poly-2-hydroxyethyl methacrylate dielectric with the Al electrode. The proposed ReRAM also has the additional advantage of forming-free switching characteristics.

中文翻译：

---

化学气相沉积法制备的基于共聚物的柔性电阻随机存取存储器

在这个物联网 (IoT) 和可穿戴技术时代，必不可少的组件之一是灵活且高性能的电阻式随机存取存储器 (ReRAM) 设备。在本文中，作者提出了一种新的基于共聚物的 ReRAM 器件，该器件使用起始化学气相沉积 (iCVD) 工艺实现。7 纳米厚的共聚物 ReRAM 器件具有高达 10 ^{5 的}耐久性能开关功率低至 438 µW。基于共聚物的 ReRAM 器件的强大耐用性源于坚固的聚-1,3,5-三乙烯基-三甲基-环三硅氧烷介电膜的特性，而其在工作电压下的低导通电流归因于带有铝电极的聚甲基丙烯酸 2-羟乙酯电介质。所提出的 ReRAM 还具有无需形成开关特性的额外优势。