“Transient” resistive random access memory (RRAM) has attracted tremendous research interests in recent years, due to its biodegradable characteristics and data storage capability. Zinc oxide (ZnO) has been widely used as the biodegradable and biocompatible material. However, research on ZnO based-RRAM shows undesired performance due to masses of intrinsic defects and low crystallinity in ZnO films when deposited using sputtering and so on. In this work, excellent crystallinity and oxygen vacancy-poor electrochemically-deposited zinc oxide (ED-ZnO) films are utilized as the active layer for fabricating transient resistive memory device with a structure of Ag/ED-ZnO/W. This ED-ZnO RRAM device exhibits uniform switching voltage, stable retention time (over 10⁴ s) at 37 °C, and outstanding endurance up to 2500 cycles without obvious degradation. Additionally, a fully degradable RRAM device is fabricated by water-assisted transfer printing method and it can be dissolved completely after immersed in phosphate buffered saline solution without encapsulation layer after 60 min. The cell toxicity test demonstrates the biocompatibility of the dissolved memory device. These results suggest that the ED-ZnO based transient RRAM has a significant potential for data storage applications in transient electric system and implantable biomedical device.

中文翻译：

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基于电化学沉积氧化锌的瞬态和生物相容性电阻开关存储器

由于其可生物降解的特性和数据存储能力，“瞬态”电阻随机存取存储器 (RRAM) 近年来引起了极大的研究兴趣。氧化锌 (ZnO) 已被广泛用作可生物降解和生物相容性材料。然而，对基于 ZnO 的 RRAM 的研究表明，当使用溅射等方式沉积时，ZnO 薄膜中存在大量固有缺陷和低结晶度，因此性能不佳。在这项工作中，优异的结晶度和氧空位差的电化学沉积氧化锌 (ED-ZnO) 薄膜被用作有源层，用于制造具有 Ag/ED-ZnO/W 结构的瞬态电阻存储器件。这种 ED-ZnO RRAM 器件具有均匀的开关电压、稳定的保留时间（超过 10 ⁴s) 在 37 °C 下，以及高达 2500 次循环的出色耐久性，而没有明显的退化。此外，通过水辅助转移印刷方法制造了一种完全可降解的 RRAM 器件，它在没有封装层的磷酸盐缓冲盐溶液中浸泡 60 分钟后可以完全溶解。细胞毒性测试证明了溶解记忆装置的生物相容性。这些结果表明，基于 ED-ZnO 的瞬态 RRAM 在瞬态电力系统和可植入生物医学设备中的数据存储应用中具有巨大的潜力。