A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84V, a low on-state voltage of 1.13V, and a high forward and reverse off-state breakdown voltages of ∼1100V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.

中文翻译：

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使用二极管桥的高性能 GaN 基单片双向开关

展示了具有二极管桥结构的基于 p-GaN 栅极高电子迁移率晶体管 (HEMT) 的单片双向开关。双向开关具有四个嵌入 p-GaN HEMT 的凹入式阳极肖特基势垒二极管，可有效降低导通电压并最大限度地减少寄生元件。所提出的器件具有 1.84V 的高阈值电压、1.13V 的低通态电压以及 ~1100V 的高正向和反向断态击穿电压。此外，还成功验证了双向开关作为交流电源斩波器的功能。