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Current-Induced Magnetization Switching in Seed Optimized Perpendicular Magnetic Tunnel Junctions with Enhanced Spin-Transfer-Torque Efficiency and Uniformity
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2021-08-16 , DOI: 10.1021/acsaelm.1c00573
Yihui Sun 1, 2 , Junlu Gong 1, 2 , Zhixiao Deng 2 , Ruofei Chen 2 , Fantao Meng 1, 2
Affiliation  

A NiCr film is introduced in magnetic tunnel junction (MTJ) seed layer to improve the smoothness of multilayer and to enhance the perpendicular magnetic anisotropy (PMA) of the pinning layer. Especially motived by the better uniformity of tunneling magnetoresistance (TMR) and switching current density (Jc), the superiority in endurance and data retention for less tailing bits is demonstrated. Benefiting from the higher spin-transfer-torque (STT) efficiency, higher coercivity and lower Jc were achieved at the same time, with satisfying 10 years retention at 85 °C and the endurance cycling lifetime up to at least 1010 cycles. This work establishes an effective path to improve STT efficiency and uniformity to expedite the commercial application of STT-magnetoresistive random access memory (MRAM).

中文翻译:

种子优化垂直磁性隧道结中的电流感应磁化开关,具有增强的自旋转移扭矩效率和均匀性

在磁隧道结 (MTJ) 种子层中引入 NiCr 薄膜,以提高多层的平滑度并增强钉扎层的垂直磁各向异性 (PMA)。特别是在隧道磁阻 (TMR) 和开关电流密度 ( J c )更好的均匀性的推动下,证明了较少拖尾位在耐久性和数据保留方面的优势。受益于更高的自旋转移扭矩 (STT) 效率,同时实现了更高的矫顽力和更低的J c,在 85 °C 下可保持 10 年,并且耐久循环寿命至少可达 10 10循环。这项工作建立了一条提高 STT 效率和均匀性的有效途径,以加快 STT 磁阻随机存取存储器 (MRAM) 的商业应用。
更新日期:2021-09-28
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