Active metamaterials (MTMs) are artificially engineered structures with tunable and exceptional properties that are absent in natural materials. Recently, InGaZnO (IGZO), a widely used semiconductor for large-area and flexible display backplane drivers, has gained interest for active control of MTMs due to its large-area uniformity, ease of thin film deposition, and low cost. In this paper, IGZO Schottky barrier diodes (SBDs) are proposed to reconfigure electric-field-coupled inductor-capacitor (ELC) MTMs and actively control terahertz (THz) waves for the first time. The SBDs are designed to bridge the capacitors of the ELC resonators so that the average conductivity within the capacitor gap can be modulated by bias voltage while keeping the capacitance value almost unchanged. To precisely simulate this mechanism, two U-shaped resistive sheet models beside the gap are built for IGZO SBD in 3-D simulation for maintaining the same capacitance and resonant frequency. Furthermore, a device with 14400 MTM cells is fabricated and characterized using frequency-domain spectroscopy. The measured transmission shows a continuous modulation from -14.2 to -9.4 dB at 0.39 THz, which corresponds to a modulation depth of 14.3%. This work paves a new way for active THz MTMs using industrial compatible thin-film technology.

中文翻译：

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InGaZnO肖特基二极管电调制的有源太赫兹超材料

活性超材料 (MTM) 是人工设计的结构，具有天然材料所不具备的可调和特殊特性。最近，InGaZnO (IGZO) 是一种广泛用于大面积和柔性显示背板驱动器的半导体，由于其大面积均匀性、易于薄膜沉积和低成本，因此在 MTM 的主动控制方面引起了人们的兴趣。在本文中，首次提出了 IGZO 肖特基势垒二极管 (SBD) 来重新配置电场耦合电感电容器 (ELC) MTM 并主动控制太赫兹 (THz) 波。SBD 旨在桥接 ELC 谐振器的电容器，以便电容器间隙内的平均电导率可以通过偏置电压进行调制，同时保持电容值几乎不变。为了精确模拟这种机制，在 3-D 模拟中为 IGZO SBD 构建了间隙旁边的两个 U 形电阻片模型，以保持相同的电容和谐振频率。此外，使用频域光谱制造和表征了具有 14400 个 MTM 单元的设备。测得的传输显示在 0.39 THz 时从 -14.2 到 -9.4 dB 的连续调制，这对应于 14.3% 的调制深度。这项工作为使用工业兼容薄膜技术的有源太赫兹 MTM 铺平了道路。这对应于 14.3% 的调制深度。这项工作为使用工业兼容薄膜技术的有源太赫兹 MTM 铺平了道路。这对应于 14.3% 的调制深度。这项工作为使用工业兼容薄膜技术的有源太赫兹 MTM 铺平了道路。