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An Ultrafast Quasi-Non-Volatile Semi-Floating Gate Memory with Low-Power Optoelectronic Memory Application
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2021-08-16 , DOI: 10.1002/aelm.202100564
Yu Zhou 1, 2 , Jing Ning 1, 2 , Xue Shen 1, 2 , Haibin Guo 1, 2 , Chi Zhang 1, 2 , Jianguo Dong 1, 2 , Wei Lu 1, 2 , Xin Feng 1, 2 , Yue Hao 1, 2
Affiliation  

Semi-floating gate (SFG) memory based on 2D materials shows ultrahigh-speed operations and fills the huge gap between volatile memory and nonvolatile memory technology in time scale. In this study, a SFG FET with a programmable rectification mode based on the 2D WS2 is achieved. The innovative use of the quasi-non-volatile programmable p–n junction photovoltaic effect successfully provides an ultra-low power consumption photovoltaic quasi-non-volatile memory. The device exhibits a switching ratio of more than 107 at constant drain-source voltage Vds = ±5 V. In the p–n junction mode, after removing the gate voltage for 1 h, the rectification ratio of the device is 105. Combined with ultra-fast operation speed, which can provide perspectives on possible directions of the next generation for low-power high-speed semi-floating gate FET applications.

中文翻译:

具有低功耗光电存储器应用的超快准非易失性半浮栅存储器

基于二维材料的半浮栅(SFG)存储器显示出超高速运行,填补了易失性存储器和非易失性存储器技术在时间尺度上的巨大差距。在这项研究中,实现了具有基于 2D WS 2的可编程整流模式的 SFG FET 。准非易失性可编程p-n结光伏效应的创新使用成功地提供了超低功耗光伏准非易失性存储器。该器件在恒定漏源电压V ds  = ±5 V 下表现出超过 10 7的开关比。在 p-n 结模式下,去除栅极电压 1 小时后,该器件的整流比为 10 5. 结合超快的运行速度,可为低功耗高速半浮栅FET应用提供下一代可能的方向。
更新日期:2021-08-16
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