ABSTRACT

In this paper, a novel resistorless CMOS voltage reference with a sub-one-volt power supply is proposed and simulated in 90 nm CMOS technology. The thermal voltage obtained from ∆V_BE is converted into a current (I) proportional to the square of temperature (T²) using a deep triode MOSFET as a resistor. A linear positive temperature coefficient part of the circuit is built by applying this current through a diode-connected MOSFET. V_TH is also used as a negative temperature coefficient part. The reference voltage is obtained from the proper combination of these two parts. The proposed circuit is designed in the sub-threshold region to reduce power consumption. Moreover, using bulk biasing and an array of MOSFETs, a trimming circuit is adopted to compensate for the process-related reference voltage variation. The nominal output voltage reference is about 0.5 V with a temperature coefficient of 25.4 ppm/^oC over a temperature range of 0 ^oC to 100 ^oC. The power supply noise attenuation of 87.5 dB is achieved without any filtering capacitor below 23 Hz at 1 V of V_dd.

摘要

在本文中，提出了一种具有低于 1 伏电源的新型无电阻 CMOS 电压基准，并在 90 nm CMOS 技术中进行了仿真。使用深三极管 MOSFET 作为电阻器，将从 ΔV _BE获得的热电压转换为与温度 (T ² )的平方成比例的电流 (I) 。电路的线性正温度系数部分是通过将该电流通过二极管连接的 MOSFET 来构建的。阈_值也用作负温度系数部分。参考电压是从这两个部分的适当组合中获得的。所提出的电路设计在亚阈值区域以降低功耗。此外，使用体偏置和 MOSFET 阵列，采用微调电路来补偿与工艺相关的参考电压变化。^{在 0 o} C 至 100 ^o C的温度范围内，标称输出电压基准约为 0.5 V，温度系数为 25.4 ppm/ ^o C。电源噪声衰减 87.5 dB 是在 23 Hz 以下没有任何滤波电容器的情况下实现的。 1 V 的 V _dd。