Ambipolar polymer semiconductors are potentially serviceable for logic circuits, light-emitting field-effect transistors (LFETs), and polymer solar cells (PSCs). Although several high-performance ambipolar polymers have been developed, their optoelectronic devices are generally processed from hazardous chlorinated solvents. To achieve the commercial applications of organic FETs (OFETs), the polymers should be processed from nonchlorinated solvents, instead of chlorinated solvents. However, most of conjugated polymers show poor solubility in nonchlorinated solvents. It is of great importance to develop ambipolar polymers that can be processed from nonchlorinated solvents. Here, we develop a nonchlorinated solvent processed polymer named poly[7-fluoro-N, N′-di(4-decyltetradecyl)-7′-azaisoindigo-6′,6″-(thieno[3,2-b]thiophene-2,5-diyl)-7‴-fluoro-N″, N‴-di(4-decyltetradecyl)-7″-azaisoindigo-6,6‴-([2,2'-bithiophene]-5,5'-diyl)] (PITTI-BT) by designing a monomer with a large molar mass. The polymer displays good solubility in p-xylene (PX). Well-aligned films of PITTI-BT are achieved by an off-center spin-coating (SC) method. Based on the high-quality films, the OFETs fabricated from PX solution achieve record ambipolar performance with hole and electron mobilities of 3.06 and 2.81 cm2 V−1 s−1, respectively. The combination of nonchlorinated solvents and good alignment process offers an effective and eco-friendly approach to obtain high-performance ambipolar transistors.

中文翻译：

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用于高性能双极晶体管的非氯化溶剂处理聚合物半导体

双极聚合物半导体可用于逻辑电路、发光场效应晶体管 (LFET) 和聚合物太阳能电池 (PSC)。尽管已经开发了几种高性能双极性聚合物，但它们的光电器件通常由危险的氯化溶剂加工而成。为了实现有机 FET (OFET) 的商业应用，聚合物应该由非氯化溶剂而不是氯化溶剂加工而成。然而，大多数共轭聚合物在非氯化溶剂中的溶解度较差。开发可以用非氯化溶剂加工的双极性聚合物非常重要。在这里，我们开发了一种非氯化溶剂处理的聚合物，名为聚[7-氟-N, N'-di(4-decyltetradecyl)-7'-azaisoindigo-6',6"-(thieno[3,2-b]thiophene- 2,5-二基)-7‴-氟-N", N‴-di(4-decyltetradecyl)-7″-azaisoindigo-6,6‴-([2,2'-bithiophene]-5,5'-diyl)] (PITTI-BT)摩尔质量。该聚合物在对二甲苯 (PX) 中表现出良好的溶解性。PITTI-BT 的排列良好的薄膜是通过偏心旋涂 (SC) 方法实现的。基于高质量薄膜，由 PX 溶液制造的 OFET 实现了创纪录的双极性能，空穴和电子迁移率分别为 3.06 和 2.81 cm2 V-1 s-1。非氯化溶剂和良好的排列工艺相结合，为获得高性能双极晶体管提供了一种有效且环保的方法。PITTI-BT 的排列良好的薄膜是通过偏心旋涂 (SC) 方法实现的。基于高质量薄膜，由 PX 溶液制造的 OFET 实现了创纪录的双极性能，空穴和电子迁移率分别为 3.06 和 2.81 cm2 V-1 s-1。非氯化溶剂和良好的排列工艺相结合，为获得高性能双极晶体管提供了一种有效且环保的方法。PITTI-BT 的排列良好的薄膜是通过偏心旋涂 (SC) 方法实现的。基于高质量薄膜，由 PX 溶液制造的 OFET 实现了创纪录的双极性能，空穴和电子迁移率分别为 3.06 和 2.81 cm2 V-1 s-1。非氯化溶剂和良好的排列工艺相结合，为获得高性能双极晶体管提供了一种有效且环保的方法。