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The influence of thermal stability on the properties of Cu3N layers synthesized by pulsed magnetron sputtering method
Thin Solid Films ( IF 2.1 ) Pub Date : 2021-08-13 , DOI: 10.1016/j.tsf.2021.138889
S. Okrasa 1 , M. Wilczopolska 1 , G. Strzelecki 1 , K. Nowakowska-Langier 1 , R. Chodun 2 , R. Minikayev 3 , K. Król 4 , L. Skowronski 5 , K. Namyślak 1 , B. Wicher 2 , A. Wiraszka 1 , K. Zdunek 2
Affiliation  

In this paper, samples of copper nitride, a thermally unstable semiconducting material, were synthesized as layers, using the pulsed magnetron sputtering method. Synthesis was performed under different pure nitrogen pressure points, which aimed at obtaining layers differentiated in terms of their structure. The deposited layers have been subjected to heat treatment to achieve a better understanding of the thermal evolution of the structure of the material. A series of treatments were carried out in different temperatures starting from within studied one phase materials stability range (T∼230°C), through the intermediate range of a two-phase structure: Cu3N, Cu (∼230°C<T<330°C) up to the point of complete thermal decomposition (T∼400°C), enabling to better describe stoichiometry contributions of copper nitride to the thermal stability of the material. Crystalline phase and lattice constants of the deposited layers were characterized with X-ray diffraction measurements for samples from each temperature point. The phase composition was confirmed by Raman spectroscopy. Optical studies were performed by spectroscopic ellipsometry and resistivity by the Kelvin measurement method. Studies were evaluated and plotted as a function of annealing temperature. Deposited samples exhibited an anti-ReO3 polycrystalline structure with its lattice constant corresponding with literature data. The results showed changes in the structure of copper nitride layers induced by temperature. Higher temperatures caused visible structural changes. Depending on the stoichiometry of copper nitride layers, the thermal stability of the material was different. The reported changes were discussed and attributed to the stoichiometry of the material layers.



中文翻译:

热稳定性对脉冲磁控溅射法合成Cu3N层性能的影响

在本文中,氮化铜样品是一种热不稳定的半导体材料,使用脉冲磁控溅射法合成为层状。合成是在不同的纯氮压力点下进行的,目的是获得结构不同的层。沉积层经过热处理,以更好地了解材料结构的热演化。从所研究的单相材料稳定性范围(T∼230°C)开始,到两相结构的中间范围:Cu 3,在不同温度下进行了一系列处理N、Cu(~230°C<T<330°C)直至完全热分解点(T~400°C),能够更好地描述氮化铜对材料热稳定性的化学计量贡献。沉积层的晶相和晶格常数用来自每个温度点的样品的 X 射线衍射测量来表征。通过拉曼光谱确认相组成。光学研究通过光谱椭偏法和电阻率通过开尔文测量方法进行。研究被评估并绘制为退火温度的函数。沉积的样品表现出抗 ReO 3多晶结构,其晶格常数与文献数据一致。结果显示了温度引起的氮化铜层结构的变化。较高的温度会导致明显的结构变化。根据氮化铜层的化学计量,材料的热稳定性不同。讨论了报告的变化并将其归因于材料层的化学计量。

更新日期:2021-08-19
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