Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters (, , FF, and ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/-(a-Si:H) interface, respectively, in the ranges [10⁹ cm^-3, 10¹⁵ cm^-3] and [10¹⁰ cm^-2,  cm^-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% (, , and ). This work presents a contribution to improving the performance of a-Si-based solar cells.

中文翻译：

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超薄氢化非晶硅基太阳能电池的数值设计

数值模型用于确认实验和理论工作。这项工作的目的是展示如何模拟超薄氢化非晶硅 (a-Si:H-) 基太阳能电池在其架构中具有 ITO BRL。本研究所得结果来自 SCAPS-1D 软件。在第一步中，超薄a-Si:H基太阳能电池的模拟和实验的JV特性的比较是一致的。其次，为了探索太阳能电池某些特性的影响，研究重点研究了本征层和缓冲层/吸收层界面对电参数（、、 FF 和）的影响。 本征层厚度的增加提高了性能，而本征层的体缺陷密度和缓冲层/ - (a-Si:H)界面的表面缺陷密度分别在[10 ⁹  cm ^-3 , 10 ¹⁵  cm ^-3 ] 和 [10 ¹⁰  cm ^-2 , cm ^-2 ]，不影响超薄a-Si:H基太阳能电池的性能。分析还表明，本征层厚度约为 1  μ m 时，最佳转换效率为 12.71% (, ，和）。这项工作为提高 a-Si 基太阳能电池的性能做出了贡献。