A pilot study for the thickness measurement of HfO₂ films was performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of this pilot study was to ensure the equivalency in the measurement capability of national metrology institutes for the thickness measurement of HfO₂ films. In this pilot study, the thicknesses of six HfO₂ films with nominal thickness from 1 nm to 4 nm were measured by X-ray Photoelectron Spectroscopy (XPS), X-ray Reflectometry(XRR), X-ray Fluorescence Analysis (XRF), Transmission Electron Spectroscopy (TEM), Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). The reference thicknesses were determined by mutual calibration of a zero-offset method (Medium Energy Ion Scattering Spectroscopy (MEIS) of KRISS) and a method traceable to the length unit (the average thicknesses of three XRR data except the thinnest film). These reference thicknesses are traceable to the length unit because they are based on the traceability of XRR. For the thickness measurement by XPS, the effective attenuation length of Hf 4f electrons was determined. In the cases of XRR and TEM, the offset values were determined from a linear fitting between the reference thicknesses and the individual data by XRR and TEM. The amount of substance of HfO₂, expressed as thickness of HfO₂ films (in both linear and areal density units), was found to be a good subject for a CCQM key comparison.

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物质含量咨询委员会 (CCQM) 的表面分析工作组 (SAWG)对 HfO ₂膜的厚度测量进行了试点研究。这项试点研究的目的是确保国家计量机构在 HfO ₂薄膜厚度测量方面的测量能力的等效性。在这项试点研究中，六个 HfO ₂的厚度标称厚度为 1 nm 至 4 nm 的薄膜通过 X 射线光电子能谱法 (XPS)、X 射线反射法 (XRR)、X 射线荧光分析法 (XRF)、透射电子能谱法 (TEM)、椭圆光谱法 (SE) 测量) 和卢瑟福背散射光谱 (RBS)。参考厚度通过零偏移法（KRISS的中能离子散射光谱（MEIS））和可溯源到长度单位的方法（除最薄薄膜之外的三个XRR数据的平均厚度）的相互校准来确定。这些参考厚度可追溯到长度单位，因为它们基于 XRR 的可追溯性。对于 XPS 的厚度测量，确定了 Hf 4f 电子的有效衰减长度。在 XRR 和 TEM 的情况下，偏移值是根据参考厚度和 XRR 和 TEM 的单个数据之间的线性拟合确定的。HfO物质的量_{图 2}表示为 HfO ₂膜的厚度（以线性和面密度单位），被发现是 CCQM 关键比较的一个很好的主题。

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