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Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2021-07-27 , DOI: 10.1088/1361-6641/ac1566
Zhe Ashley Jian 1 , Islam Sayed 2 , Subhajit Mohanty 1 , Wenjian Liu 2 , Elaheh Ahmadi 1, 3
Affiliation  

In this work, we studied the impact of post-metallization annealing (PMA) on interfacial and bulk dielectric properties of AlSiO/β-Ga2O3 metal–oxide–semiconductor capacitors (MOSCAPs). Annealing at 300 C improved the reverse operational stability within the test operation range from −10 V to −42 V. The near-interface fast and slow traps were both suppressed by PMA at 300 C and 350 C, leading to a negligible flat-band voltage hysteresis. The low gate leakage region was extended from 3.7 MV cm−1 to 4 MV cm−1 and the breakdown strength was improved from 7.8 MV cm−1 to 8.2 MV cm−1 for AlSiO/β-Ga2O3 MOSCAPs with PMA at 300 C compared with not-annealed samples. The superior operational reliability demonstrated in this work is useful for future high-performance and reliable MOS-based Ga2O3 transistors.



中文翻译:

通过后金属化退火提高 β-Ga2O3 (001) 上 MOCVD 生长的 AlSiO 栅极电介质的操作可靠性

在这项工作中,我们研究了后金属化退火 (PMA) 对 AlSiO/ β -Ga 2 O 3金属氧化物半导体电容器 (MOSCAP) 的界面和体介电性能的影响。在 300 C 下退火提高了测试操作范围内从 -10 V 到 -42 V 的反向操作稳定性。近界面快阱和慢阱均在 300 C 和 350 C 下被 PMA 抑制,导致平带可忽略不计电压滞后。低栅极漏区是从3.7厘米MV扩展-1至4 MV厘米-1和击穿强度提高从7.8 MV厘米-1至8.2 MV厘米-1为AlSiO / β -Ga 2 ö300°C 下含 PMA 的3 MOSCAP 与未退火样品的比较。这项工作中展示的卓越操作可靠性对于未来高性能和可靠的基于 MOS 的 Ga 2 O 3晶体管非常有用。

更新日期:2021-07-27
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