Combined with Ti/TiN/Al for ultra-thin NiSi₂ and in situ-doped Si:P, an ultra-low contact resistivity of 4.6 10⁻⁹ Ω cm² was achieved under a low thermal budget (⩽450 C). The in situ-doped Si:P layer was grown by molecular beam epitaxy at 350 C with a high doping concentration of 1.2 10²¹ cm⁻³ exceeding the solid solubility. On the Si:P substrate, ultra-thin NiSi₂ film of 12.8 nm was formed by low-temperature drive-in diffusion and alloying at 180 C and 450 C, respectively. The Ti/TiN/Al-NiSi₂-Si:P scheme provides a solution to the dilemma between performance boosting and reliability degradation in advanced very-large-scale integration manufacturing technology. It can also be applied in future monolithic three-dimensional integration.

与用于超薄 NiSi _{2 的}Ti/TiN/Al和原位掺杂的 Si:P 相结合，在低热预算（⩽450 C）下实现了 4.6 10 ^-9 Ω cm ²的超低接触电阻率。的原位掺杂Si：P层通过分子束外延在350℃下以1.2 10高掺杂浓度生长²¹厘米^-3超过固体溶解度。在Si:P衬底上，分别在180℃和450℃下通过低温驱入扩散和合金化形成了12.8nm的超薄NiSi ₂膜。Ti/TiN/Al-NiSi ₂-Si:P 方案为先进超大规模集成制造技术中性能提升和可靠性降低之间的困境提供了解决方案。它也可以应用于未来的单片三维集成。