当前位置: X-MOL 学术Semicond. Sci. Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A 32 nm single-ended single-port 7T static random access memory for low power utilization
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2021-07-27 , DOI: 10.1088/1361-6641/ac07c8
Bhawna Rawat , Poornima Mittal

In this paper, a seven-transistor static random access memory (SRAM) bit cell with a single bitline architecture is proposed. This cell is designed at 32 nm and is operational at 300 mV. The static noise margin for the read and hold modes is 90 mV, while the write margin is 180 mV. Monte Carlo analysis for 6σ global variations and temperature variation analysis for temperatures in the range −10 C to 80 C validate its performance. The cell is compared with other single-ended 5T, 6T, 7T, 8T, 9T and 10T SRAM cells and is found to be superior in performance. As the leakage current is low, the I ON /I OFF ratio is high compared with the other cells. The power consumption of the bit cell is also found to be minimal for all modes of operation. The dynamic write analysis demonstrates that the proposed cell completes the write operation in a 10 ns pulse width. Moreover, the improvement in performance is obtained for an area as low as 0.539 m2. The area of 5T, 6T, 7T-1, 7T-2, 7T-4, 7T-5, 8T, 9T and 10T cells is greater than the 7TP bit cell area by 22.17%, 51.8%, 35.8%, 13.9%, 30.4%, 6.78%, 56.6%, 63.3% and 75.5%, respectively.



中文翻译:

用于低功耗的 32 nm 单端单端口 7T 静态随机存取存储器

在本文中,提出了一种具有单位线架构的七晶体管静态随机存取存储器 (SRAM) 位单元。该电池设计波长为 32 nm,工作电压为 300 mV。读取和保持模式的静态噪声容限为 90 mV,而写入容限为 180 mV。6 σ全局变化的蒙特卡罗分析和 -10 C 至 80 C 范围内温度的温度变化分析验证了其性能。该单元与其他单端 5T、6T、7T、8T、9T 和 10T SRAM 单元进行比较,发现其性能更优。由于漏电流低,I ON /I OFF比其他细胞高。还发现位单元的功耗对于所有操作模式都是最小的。动态写入分析表明,建议的单元在 10 ns 脉冲宽度内完成写入操作。此外,对于低至 0.539 的区域,性能也有所提高2。5T、6T、7T-1、7T-2、7T-4、7T-5、8T、9T和10T单元的面积比7TP位单元面积大22.17%、51.8%、35.8%、13.9%,分别为 30.4%、6.78%、56.6%、63.3% 和 75.5%。

更新日期:2021-07-27
down
wechat
bug