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Critical layer thickness of wurtzite heterostructures with arbitrary pairs of growth planes and slip systems
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2021-07-13 , DOI: 10.1088/1361-6641/ac0d95
Shuhei Ichikawa 1 , Mitsuru Funato 1 , Yoichi Kawakami 1
Affiliation  

We establish a calculation method to determine the critical layer thickness of the lattice relaxation in wurtzite heterostructures with arbitrary pairs of growth planes and slip systems. The calculation, which is based on the force balance model, takes the friction force and thermal assistance for the dislocation motion into account. Experimentally, Al x Ga1 − x N/AlN heterostructures are fabricated. The established method well reproduces the crystallographic orientations of experimentally observed dislocation lines.



中文翻译:

具有任意一对生长平面和滑移系统的纤锌矿异质结构的临界层厚度

我们建立了一种计算方法来确定具有任意一对生长平面和滑移系统的纤锌矿异质结构中晶格弛豫的临界层厚度。该计算基于力平衡模型,考虑了位错运动的摩擦力和热辅助。实验上,制造了Al x Ga 1 -  x N/AlN 异质结构。所建立的方法很好地再现了实验观察到的位错线的晶体取向。

更新日期:2021-07-13
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