The trends in electronic structure of Bi³⁺ and Bi²⁺ as luminescent dopant in wide bandgap inorganic compounds and that of pure Bi-compounds for photocatalytic splitting of water are explored by determination of vacuum referred electron binding energies. Spectroscopic data combined with the chemical shift model from the luminescence field and data on flatband potentials in electrochemistry provide most of the needed data. Occasionally data from photoelectron spectroscopy is used. The trends in VRBE of Bi³⁺ and Bi²⁺ ground state and excited state levels resemble that of Ce³⁺ and Eu²⁺ lanthanides. To some extend a pure Bi-compound can be regarded as a 100% Bi³⁺ doped La-compound. This all will be demonstrated and an overview on Bi electronic structure is presented. Comparison of electronic structure for Bi as luminescent dopant in inorganic compounds with pure Bi-compounds entails also a comparison of two disciplines in electro-chemistry, that of luminescence materials and of photo-catalytic compounds.

通过测定真空相关的电子结合能，探讨了作为宽带隙无机化合物中发光掺杂剂的Bi ³⁺和Bi ^{2+ 的}电子结构趋势以及用于光催化分解水的纯Bi化合物的电子结构趋势。光谱数据与来自发光场的化学位移模型和电化学中的平带电位数据相结合，提供了大部分所需的数据。偶尔会使用来自光电子能谱的数据。Bi ³⁺和Bi ²⁺基态和激发态能级的VRBE趋势类似于Ce ³⁺和Eu ²⁺镧系元素的VRBE趋势。在某种程度上，纯 Bi 化合物可视为 100% Bi ³⁺掺杂的 La 化合物。这一切都将得到证明，并概述了 Bi 电子结构。作为无机化合物中发光掺杂剂的 Bi 与纯 Bi 化合物的电子结构的比较还需要比较电化学中的两个学科，即发光材料和光催化化合物。