The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior.

非晶氧化铪薄层的使用已被证明适用于制造电阻式随机存取存储器 (RRAM)。这些存储器由于其简单的结构和非易失性而备受关注。它们特别有吸引力，因为它们是替代闪存的理想选择。在这项工作中，从中间状态的控制和循环耐久性方面研究了基于 1-晶体管-1-电阻 (1T1R) 单元的 4 kbit 存储器阵列的 MIM 结构的性能。为了充分表征器件，进行了直流和小信号实验，这些器件具有出色的多电平能力和电阻开关行为。