In this work, the performance of dielectric modulated InP/InGaAs/InP based on the hetero channel dual material double gate MOSFET (DM-H-DMDG MOSFET) for the label-free electrical identification of bio-targets has been inspected with the help of a 2D TCAD device simulator. The impact of bio-target’s location and their fill factor position has been analysed to observe the device sensitivity. Under the dry situation, the effect of charged and non-charged biomolecules on the electrical features such as threshold voltage, electric field, drain current, subthreshold performance, and sensitivity of DM-H-DMDG MOSFET has been evaluated. Simulation results show that the threshold voltage sensitivity of the proposed device is 0.62 and 0.59 when the fill factor is 100% and 50% respectively. The peak value of an electric field is 4.2נ10⁶ V cm⁻¹ and 4.5נ10⁶ V cm⁻¹ respectively near the source end and 0.5נ10⁵ V cm⁻¹ and 5.5נ10⁵ V cm⁻¹ near the drain end, when positively/negatively charged biomolecules are immobilised in the cavity. Again, the threshold voltage of the device is obtained as 0.265 V/0.245 V when the fill factor is 100% and 50% respectively.

在这项工作中，基于异质通道双材料双栅极 MOSFET (DM-H-DMDG MOSFET) 的介电调制 InP/InGaAs/InP 的性能已经在生物目标的无标记电识别的帮助下进行了检查。 2D TCAD 设备模拟器。分析了生物目标位置及其填充因子位置的影响，以观察设备灵敏度。在干燥情况下，评估了带电和不带电生物分子对 DM-H-DMDG MOSFET 的阈值电压、电场、漏极电流、亚阈值性能和灵敏度等电气特性的影响。仿真结果表明，当填充因子为 100% 和 50% 时，所提出器件的阈值电压灵敏度分别为 0.62 和 0.59。电场的峰值为 4.2נ10⁶ V cm ^-1和 4.5נ10 ⁶ V cm ^-1分别在源端附近和 0.5נ10 ⁵ V cm ^-1和 5.5נ10 ⁵ V cm ^-1在漏端附近，当带正/负电荷的生物分子固定在腔中时. 同样，当填充因子分别为 100% 和 50% 时，器件的阈值电压为 0.265 V/0.245 V。