The dominant exciton decay mechanisms of chemical vapor deposition (CVD) grown, few-layer MoTe₂ are investigated by measuring and statistically analyzing its ultrafast, optical transient reflectivity dynamics under different pump excitation energies, fluences and temperatures. Defect interaction controls the ultrafast exciton decay pathways. Weak intralayer bonding in few-layer, CVD MoTe₂ causes it to have a greater defect density than in other mechanically exfoliated 2D transition metal dichalcogenides. Direct charge carrier occupation of trap states is thought to cause an additional transient feature on the A′ exciton which is not present in the absorption spectrum. Additionally, long-term ambient air exposure does not significantly affect few-layer MoTe₂ exciton decay time and absorption peak shape, increasing this material’s suitability for many technological applications.

通过测量和统计分析化学气相沉积 (CVD) 生长的少层 MoTe ₂在不同泵激能量、能量密度和温度下的超快光学瞬态反射动力学，研究了化学气相沉积 (CVD) 生长的主要激子衰减机制。缺陷相互作用控制超快激子衰变途径。与其他机械剥离的 2D 过渡金属二硫属化物相比，少层 CVD MoTe _{2 中的}弱层内键合导致其具有更大的缺陷密度。陷阱态的直接电荷载流子占据被认为会导致 A' 激子上的附加瞬态特征，该特征不存在于吸收光谱中。此外，长期暴露在环境空气中不会显着影响少层 MoTe ₂ 激子衰减时间和吸收峰形，增加了这种材料对许多技术应用的适用性。