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Interface electronic structure and valence band dispersion of bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) on polycrystalline Au electrodes
Electronic Structure Pub Date : 2021-06-16 , DOI: 10.1088/2516-1075/ac0124
Yasuo Nakayama 1 , Koji Sudo 1 , Noboru Ohashi 2 , Satoshi Kera 3 , Yasuyuki Watanabe 2
Affiliation  

Bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) (BTQBT) is a promising material for application in vertical organic transistor devices because of considerable energy dispersion in its valence band (VB). In this study, the electronic structure at the interface of BTQBT on polycrystalline Au electrodes was elucidated by photoelectron spectroscopy (PES). The excitation photon energy-dependence of the PES corroborated a widely dispersing VB of the solid-state BTQBT on Au. An intermolecular transfer integral of 75 meV and the hole effective mass of 4.3m 0 were derived from the present results.



中文翻译:

双(1,2,5-噻二唑并)-对醌双(1,3-二硫醇)在多晶Au电极上的界面电子结构和价带色散

双(1,2,5-噻二唑并)--喹双(1,3-二硫醇) (BTQBT) 是一种很有前途的材料,可用于垂直有机晶体管器件,因为其价带 (VB) 中具有相当大的能量色散。在这项研究中,通过光电子能谱(PES)阐明了多晶 Au 电极上 BTQBT 界面处的电子结构。PES 的激发光子能量依赖性证实了固态 BTQBT 在 Au 上的广泛分散的 VB。75 meV 的分子间转移积分和 4.3 m 0的空穴有效质量从本结果导出。

更新日期:2021-06-16
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