The rising complexity of multi-material structures integrated into multi-functional devices requires the development of dedicated characterization tools capable of simultaneously monitoring different physical magnitudes with a relevant spatial resolution. This paper reports the development and the application of an original instrument based on a nanoindenter coupled with fine electrical measurements and integrated in-situ a Scanning Electron Microscope (SEM). The performances and capabilities of this home-developed instrument are illustrated through two different case studies.

First, a micrometer-scale piezoelectric structure made up of wurtzite-single crystalline AlN islands grown on top of conductive Si pillars is tested. In-situ SEM imaging is used to precisely position the indenting probe on these individual islands, while the instrument sensitivity and repeatability are used to monitor their low-signal piezoresponse. Effective piezoelectric coefficients are also extracted for different loading/unloading conditions.

Secondly a Si₃N₄/AlSiCu/SiO₂ stack, which is standardly integrated as a passivation structure on top of microelectronic chips, is electrically and mechanically stressed and monitored up to its failure. The mechanical failure mechanisms (buried or emerging cracks) are discriminated thanks to the real-time SEM imaging of the indentation test. The instrument high sensitivity is used to monitor early current leakages that are attributed to conduction paths induced by mechanical failures.

Combining high electro-mechanical sensitivity and precise probe positioning appears as an efficient way to monitor and analyze low-level electrical responses of small-scale structures. This approach paves the way to the fine characterization of micro/nano-systems displaying mechanically-driven electrical properties (conduction mechanism, leakage, breakdown,) like 2D-materials, dielectrics in microelectronic devices, strain-sensors, enamelled Litz wires,…

集成到多功能设备中的多材料结构日益复杂，需要开发专用表征工具，能够同时监测具有相关空间分辨率的不同物理量级。本文报告了基于纳米压痕仪、精细电学测量和集成原位扫描电子显微镜 (SEM) 的原始仪器的开发和应用。通过两个不同的案例研究说明了这种自制仪器的性能和功能。

首先，测试由生长在导电硅柱顶部的纤锌矿单晶 AlN 岛组成的微米级压电结构。原位 SEM 成像用于在这些单独的岛上精确定位压痕探针，而仪器灵敏度和可重复性用于监测它们的低信号压电响应。还针对不同的加载/卸载条件提取了有效压电系数。

其次，Si ₃ N ₄ /AlSiCu/SiO ₂堆叠，标准地集成为微电子芯片顶部的钝化结构，受到电和机械应力并监控直至其失效。由于压痕测试的实时 SEM 成像，机械故障机制（埋藏或出现的裂纹）得以区分。该仪器的高灵敏度用于监测由机械故障引起的传导路径引起的早期电流泄漏。

结合高机电灵敏度和精确的探针定位似乎是监测和分析小尺度结构低电平电响应的有效方法。这种方法为微/纳米系统的精细表征铺平了道路，这些系统显示机械驱动的电气特性（传导机制、泄漏、击穿），如二维材料、微电子设备中的电介质、应变传感器、漆包利兹线……