Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re₃Ge₇, which undergoes a second-order metal–insulator-like transition at ~58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re₃Ge_7−xGa_x. As a consequence, the phase transition is gradually suppressed and disappears above x = 0.2. At this x value, superconductivity emerges and T_c exhibits a dome-like doping dependence with a maximum value of 3.37 K at x = 0.25. First principles calculations suggest that the phase transition in Re₃Ge₇ is associated with an electronic instability driven by Fermi-surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re₃Ge₇ provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.

超导性经常通过掺杂显示集体相变的化合物出现。然而，到目前为止，这还没有在拓扑材料中观察到。在这里，我们报告了由 Ga 在正交 Re ₃ Ge _{7 中}掺杂引起的超导性的发现，它在~58 K 处经历了二阶金属-绝缘体状转变，并预计具有非平凡的能带拓扑结构。发现Ga替代Ge导致Re ₃ Ge _{7- x} Ga _{x 中的}空穴掺杂。结果，相变逐渐被抑制并在x  = 0.2以上消失。在这个x值，超导性出现，T _c表现出类似圆顶的掺杂依赖性，在x  = 0.25处最大值为 3.37 K。第一性原理计算表明，Re ₃ Ge ₇中的相变与费米表面嵌套驱动的电子不稳定性有关，并且在 Ga 掺杂后保留了非平凡的带拓扑结构。我们的结果表明，Ga 掺杂的 Re ₃ Ge ₇为研究拓扑非平凡系统中超导性和竞争电子态之间的相互作用提供了难得的机会。