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On-chip ultrafast pulse generation based on graphene-silicon hybrid waveguides
Photonics Research ( IF 7.6 ) Pub Date : 2021-08-11 , DOI: 10.1364/prj.428050
Meng Deng , Zichun Liao , Yankai Chen , Ningning Yang , Xu Yan , Chi Zhang , Nengli Dai , Yi Wang

On-chip ultrafast mode-locking lasers are basic building blocks for the realization of a chip-based optical frequency comb. In this paper, an ultrafast saturable absorber made up of a graphene pad on top of a silicon waveguide is applied to implement an ultrafast pulse laser. Benefiting from the small mode area of the graphene/silicon hybrid waveguide, the saturable pulse energy is reduced by two orders of magnitude compared with the fiber. A mode-locked pulse with a duration of 542 fs and a repetition rate of 54.37 MHz is realized. Pump–probe measurement shows that the carrier relaxation process of free carrier recombination with atomic-thin graphene/silicon junctions is three orders of magnitude faster than silicon, which plays a fundamental role in pulse narrowing. The chip-scale silicon ultrafast laser lays a foundation for a new class of nonlinear devices, in which a combination with multiple functional silicon photonic circuits enables efficient nonlinear interaction at the micrometer scale and less than 1 W of power consumption.

中文翻译:

基于石墨烯-硅混合波导的片上超快脉冲生成

片上超快锁模激光器是实现基于芯片的光频梳的基本构建块。在本文中,应用由硅波导顶部的石墨烯垫组成的超快可饱和吸收器来实现超快脉冲激光器。得益于石墨烯/硅混合波导的小模式面积,与光纤相比,可饱和脉冲能量降低了两个数量级。实现了持续时间为 542 fs、重复率为 54.37 MHz 的锁模脉冲。泵浦探针测量表明,自由载流子与原子级薄石墨烯/硅结复合的载流子弛豫过程比硅快三个数量级,这在脉冲变窄中起着根本作用。
更新日期:2021-09-02
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