Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy,Applied Physics Express

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Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-08-11 , DOI: 10.35848/1882-0786/ac16ba
Kazutaka Kanegae ₁ , Tetsuo Narita ₂ , Kazuyoshi Tomita ₂ , Tetsu Kachi ₃ , Masahiro Horita _{3,

4} , Tsunenobu Kimoto ₁ , Jun Suda _{1,

3,

4}

Affiliation

The ratio of the photoionization cross sections ( ${\sigma }_{{\rm{n}}}^{{\rm{o}}}/{\sigma }_{{\rm{p}}}^{{\rm{o}}}$ ) of carbon substituting at the nitrogen site [C_N (0/−)] in n-type GaN, which is detected as a hole trap H1 ( ${E}_{{\rm{V}}}$ +0.85eV) under sub-bandgap-light irradiation (390nm), is determined with isothermal capacitance transient spectroscopy (ICTS). The current-injection ICTS and the sub-bandgap-light-excited ICTS were compared for the same p⁺-n junction diode, whereby the hole occupancy ratio ( ${f}_{{\rm{T}}}$ ) was obtained. Analysis of the dependence of ${f}_{{\rm{T}}}$ on the temperature gave ${\sigma }_{{\rm{n}}}^{{\rm{o}}}/{\sigma }_{{\rm{p}}}^{{\rm{o}}}$ of 3.0 was then used to estimate the charge state of C_N (0/−) under sub-bandgap-light irradiation.

中文翻译：

等温电容瞬态光谱法测定亚带隙光照射下GaN中氮位碳的光电离截面比

在亚带隙光下检测为空穴陷阱 H1 ( +0.85eV) 的n 型 GaN 中 ${\sigma }_{{\rm{n}}}^{{\rm{o}}}/{\sigma }_{{\rm{p}}}^{{\rm{o}}}$ 氮位点 [C _N (0/-)]处碳取代的光电离截面 ( )的比率 ${E}_{{\rm{V}}}$ 辐照 (390nm)，用等温电容瞬态光谱 (ICTS) 测定。对于相同的 p ⁺ -n 结二极管，比较电流注入 ICTS 和子带隙光激发 ICTS ，从而获得空穴占有率 ( ${f}_{{\rm{T}}}$ )。然后使用 3.0 ${f}_{{\rm{T}}}$ 的温度依赖性分析 ${\sigma }_{{\rm{n}}}^{{\rm{o}}}/{\sigma }_{{\rm{p}}}^{{\rm{o}}}$ 来估计子带隙光照射下C _N (0/-)的电荷状态。

更新日期：2021-08-11

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