This letter presents a dual-polarization beamformer chip for fifth-generation (5G) applications. The chip leverages a vector-sum phase shifter (VSPS) approach and single-ended design, allowing a reduced control circuitry complexity. The use of the VSPS translates in both phase shift and gain control, as shown in the system analysis. This beamformer is suitable for four dual-polarized antennas, achieving high gain control for each element. The performance can be summarized as a 1-dB compression point of 11dBm, while having an rms phase and amplitude error lower than 0.5° and 0.4 dB, respectively, at the maximum constant magnitude gain circle. Moreover, it is shown that the design can afford tapering despite relying only on the VSPS for gain control.

中文翻译：

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采用 130-nm SiGe BiCMOS 的 2 × 4 无 VGA 双向双极化 28 GHz 波束形成器

这封信展示了适用于第五代 (5G) 应用的双偏振波束形成器芯片。该芯片利用矢量和移相器 (VSPS) 方法和单端设计，从而降低了控制电路的复杂性。VSPS 的使用转化为相移和增益控制，如系统分析所示。该波束形成器适用于四根双极化天线，实现对每个元件的高增益控制。性能可以概括为 11dBm 的 1dB 压缩点，同时在最大恒定幅度增益圆上具有分别低于 0.5° 和 0.4dB 的均方根相位和幅度误差。此外，它表明尽管仅依靠 VSPS 进行增益控制，但该设计可以承受逐渐变细。