In this report, Ag nanoparticles were fabricated using the single-step glancing angle deposition (SS-GLAD) technique upon In₂O₃/TiO₂ thin film. Afterward, a detailed analysis was done for the two samples such as In₂O₃/TiO₂ thin film and In₂O₃/TiO₂ thin film/Ag nanoparticles, to inspect the field emission scanning electron microscopy (FESEM), energy-dispersive X-ray analysis (EDAX), X-ray diffraction (XRD), ultraviolet (UV) spectroscopy, and electrical properties. The reduction in bandgap energy for the samples of In₂O₃/TiO₂ thin film/Ag nanoparticles (~4.16 eV) in comparison with the In₂O₃/TiO₂ thin film (~4.28 eV) was due to trapped e–h recombination at the oxygen vacancies and electron transmission of Ag to the conduction band of the In₂O₃/TiO₂ thin films. Moreover, under irradiation of photons Ag nanoparticles generated inorganic Ag–O compound attributable to the localized surface plasmon resonance (LSPR). Also, a ~90% high transmittance, ~60% and ~25% low reflectance in UV and visible region, fill factor (FF) of 53%, as well as power conversion efficiency (PCE) of 15.12% was observed for In₂O₃/TiO₂ thin film/Ag nanoparticles than the In₂O₃/TiO₂ thin film. Therefore, the use of Ag nanoparticles textured In₂O₃/TiO₂ thin film–based device is a promising approach for the forthcoming photovoltaic applications.

在本报告中，使用单步掠射角沉积 (SS-GLAD) 技术在 In ₂ O ₃ /TiO ₂薄膜上制造银纳米颗粒。随后，对In ₂ O ₃ /TiO ₂薄膜和In ₂ O ₃ /TiO ₂薄膜/Ag纳米颗粒这两个样品进行了详细分析，通过场发射扫描电子显微镜（FESEM）、能量-色散 X 射线分析 (EDAX)、X 射线衍射 (XRD)、紫外 (UV) 光谱和电性能。In ₂ O ₃ /TiO ₂样品带隙能的降低薄膜/Ag 纳米粒子（~4.16 eV）与 In ₂ O ₃ /TiO ₂薄膜（~4.28 eV）相比，是由于在氧空位处捕获e-h复合以及 Ag 到导带的电子传输In ₂ O ₃ /TiO ₂薄膜。此外，在光子照射下，Ag 纳米粒子会产生无机 Ag-O 化合物，这归因于局域表面等离子体共振（LSPR）。此外，观察到 In ₂具有 ~90% 的高透射率、~60% 和 ~25% 的紫外和可见光区域低反射率、53% 的填充因子 (FF) 以及 15.12% 的功率转换效率 (PCE) O ₃ /TiO ₂薄膜/Ag纳米颗粒比In ₂ O ₃ /TiO ₂薄膜。因此，使用基于 In ₂ O ₃ /TiO ₂薄膜的结构化银纳米颗粒是即将到来的光伏应用的一种有前途的方法。