Nanotechnologies in Russia Pub Date : 2021-08-09 , DOI: 10.1134/s2635167621030149 S. V. Novikov 1 , A. S. Antonov 1 , A. A. Pospeev 1 , V. S. Kuznetsova 1 , A. T. Burkov 1
Abstract
The thermoelectric properties of thin Cr0.33Si0.67 films in amorphous and crystalline states, as well as at different annealing stages in the temperature range 100–900 K have been studied. The crystallization of amorphous films at a temperature of ~550 K is accompanied by an increase in the resistivity and thermoelectric power. Amorphous films crystallize with the formation of CrSi2 nanocrystals with an average grain size of 10–20 nm. The increase in resistivity is due to the appearance of a crystalline phase and the formation of interphase boundaries between the crystalline and amorphous phases. The scattering of charge carriers at interphase boundaries is selective, which leads to the appearance of an additional contribution to the thermopower.
中文翻译:
非晶和纳米晶 Cr0.33Si0.67 薄膜在 100-900 K 范围内不同退火阶段的热电性能
摘要
研究了 Cr 0.33 Si 0.67薄膜在非晶态和结晶态以及在 100-900 K 温度范围内不同退火阶段的热电性能。在~550 K 的温度下,非晶薄膜的结晶伴随着电阻率和热电功率的增加。非晶薄膜结晶,形成平均晶粒尺寸为 10-20 nm的 CrSi 2纳米晶体。电阻率的增加是由于结晶相的出现以及结晶相和非晶相之间相间边界的形成。相间边界处电荷载流子的散射是选择性的,这导致对热电势的额外贡献的出现。