Purpose

The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs).

Design/methodology/approach

To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel material. The BLGNR-TFET is designed in QuantumATK, depending on 2-D Poisson’s equation and non-equilibrium Green’s function (NEGF) formalism.

Findings

The performance of the proposed BLGNR-TFET is investigated in terms of current and voltage (I-V) characteristics and transconductance. Moreover, the proposed device performance is compared with the monolayer GNR-TFET (MLGNR-TFET). From the simulation results, it is investigated that the BLGNR-TFET shows high current and gain over the MLGNR-TFET.

Originality/value

This paper presents a new technique to design GNR-based TFET for future low power very large-scale integration (VLSI) devices.

中文翻译：

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双层石墨烯纳米带隧道场效应晶体管的设计

目的

本文的目的是使用石墨烯纳米带 (GNR) 设计新型隧道场效应晶体管 (TFET)。

设计/方法/途径

为了设计所提出的 TFET，双层 GNR (BLGNR) 已被用作沟道材料。BLGNR-TFET 在 QuantumATK 中设计，具体取决于二维泊松方程和非平衡格林函数 (NEGF) 形式。

发现

拟议的 BLGNR-TFET 的性能在电流和电压 (IV) 特性以及跨导方面进行了研究。此外，将所提出的器件性能与单层 GNR-TFET (MLGNR-TFET) 进行了比较。从仿真结果可以看出，BLGNR-TFET 显示出高于 MLGNR-TFET 的高电流和增益。

原创性/价值

本文介绍了一种为未来低功耗超大规模集成 (VLSI) 器件设计基于 GNR 的 TFET 的新技术。