We investigate the effective surface recombination velocity S_eff of alkaline textured, Phosphorus-diffused and thermal SiO₂/SiN_x passivated surfaces with an emphasis on the impact of the thermal oxidation temperature. The application of a recent calibration procedure for the carrier lifetime measurements enables a precise determination of the dark saturation current density. The experimental results include 25 diffusion/oxidation process combinations that cover a wide range of final surface concentration levels N_s between 3⋅10²⁰ cm⁻³ and 1⋅10¹⁹ cm⁻³, using oxidation temperatures T_ox from 650 °C to 900 °C. This yields a data set that enables a revision of the commonly applied parameterization of the effective surface recombination velocity of this passivation scheme using numerical simulation. In addition, the impact of fixed surface charges is modeled for separating field effect and chemical passivation properties. Also, the role of the oxidation temperature on the passivation quality is investigated.

我们研究了碱性织构、磷扩散和热 SiO ₂ /SiN _x钝化表面的有效表面复合速度S _eff，重点是热氧化温度的影响。最近的载流子寿命测量校准程序的应用能够精确确定暗饱和电流密度。实验结果包括覆盖宽范围的最终表面浓度水平的25扩散/氧化工艺组合Ñ_小号3⋅10之间²⁰ 厘米^-3和1⋅10 ¹⁹ 厘米^-3，使用氧化温度Ť_牛从 650 °C 到 900 °C。这产生了一个数据集，可以使用数值模拟来修改该钝化方案的有效表面复合速度的常用参数化。此外，对固定表面电荷的影响进行建模以分离场效应和化学钝化特性。此外，还研究了氧化温度对钝化质量的影响。