Suppression of harmful effect due to by-product on homo-epitaxial growth of 4H-SiC films using a high speed wafer rotation vertical CVD method was demonstrated. Influence of by-product, such as 3C-SiC deposit on a hot-wall and Si deposit on gas nozzles, formed during the epitaxial growth was investigated in two comparative studies. The analysis of triangular defects with 3C-SiC down-falls on the films revealed that the most of the down-falls which were peeled from the hot-wall adhered to the wafers before the epitaxial growth. By increasing the wafer rotation speed to 300 rpm just after wafer loading into the reactor, the down-falls dropped towards the wafer surface were effectively eliminated, and the maintenance period of the reactor could be increased more than 4 times compared to the case of maintaining the wafer rotation speed of 50 rpm until just before epitaxial growth step. Additionally, the relationship between Si deposit formed on the gas nozzles in the gas inlet and fluctuation of thickness and doping concentration of the films suggested that Si deposit formed on the gas nozzles acts as a trap site of Si source gas. By suppression of the Si deposit using optimizing gas flow condition, no significant fluctuation of thickness and doping concentration of the films were observed and the maintenance period of the gas nozzles could be increased more than 3 times compared to the epitaxial growth using the nozzles on which Si deposit was formed.

中文翻译：

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4H-SiC外延CVD反应器副产物有害影响的影响和抑制

证明了使用高速晶片旋转垂直 CVD 方法抑制副产物对 4H-SiC 膜的同质外延生长的有害影响。在两项比较研究中，研究了外延生长过程中形成的副产品的影响，例如 3C-SiC 沉积在热壁上和 Si 沉积在气体喷嘴上。对薄膜上带有 3C-SiC 下坠的三角形缺陷的分析表明，大部分从热壁上剥离的下坠在外延生长之前粘附在晶片上。通过在晶圆装入反应器后立即将晶圆转速提高到 300 rpm，有效消除了落向晶圆表面的坠落，与在外延生长步骤之前保持50rpm的晶片转速的情况相比，反应器的维护时间可以增加4倍以上。此外，气体入口处的气体喷嘴上形成的Si沉积物与薄膜厚度和掺杂浓度的波动之间的关系表明，在气体喷嘴上形成的Si沉积物充当Si源气体的陷阱位点。通过优化气流条件抑制Si沉积，未观察到薄膜厚度和掺杂浓度的显着波动，与使用外延生长的喷嘴相比，气体喷嘴的维护期可增加3倍以上。形成Si沉积物。气体入口处的气体喷嘴上形成的Si沉积物与薄膜厚度和掺杂浓度的波动之间的关系表明，在气体喷嘴上形成的Si沉积物充当Si源气体的陷阱位点。通过优化气流条件抑制Si沉积，未观察到薄膜厚度和掺杂浓度的显着波动，与使用外延生长的喷嘴相比，气体喷嘴的维护期可增加3倍以上。形成Si沉积物。气体入口处的气体喷嘴上形成的Si沉积物与薄膜厚度和掺杂浓度的波动之间的关系表明，在气体喷嘴上形成的Si沉积物充当Si源气体的陷阱位点。通过优化气流条件抑制Si沉积，未观察到薄膜厚度和掺杂浓度的显着波动，与使用外延生长的喷嘴相比，气体喷嘴的维护期可增加3倍以上。形成Si沉积物。