Electrical properties and microstructure of phosphorus (P) implanted p-type Si substrates were evaluated by four-point probe (4PP), Differential Hall Effect Metrology (DHEM), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) techniques, after RTA 750–950°C and CO ₂ laser 120–140W annealing. When RTA temperature was increased, defect concentration at a-Si/c-Si interface gradually disappeared. For CO ₂ laser annealing, defects were found to aggregate at the end of range (EOR) region. Sheet resistance (Rs) values decreased significantly with increasing RTA temperature due to defects disappearing at EOR. Rs did not change appreciably for the CO ₂ laser annealing case. The dopant activation ratio was less than 50% below RTA temperature of 850 °C, and it increased to 70% at 950 °C. For CO ₂ laser annealing, the activation ratio could reach to over 80% regardless of the laser power. The highest active concentration and the lowest resistivity or mobility were found to be within the top 20 nm region of the surface. Although RTA annealing conditions influenced dopant diffusion and the resulting electrical property depth profiles significantly, depth profiles did not change much with changes in CO ₂ laser power level. It was demonstrated that DHEM data in conjunction with SIMS and TEM data can be successfully employed to evaluate, in detail, the electrical properties of ultra-shallow junctions for metal oxide semiconductor field effect transistor (MOSFET) applications.

中文翻译：

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用于超浅结评估的磷掺杂硅电性能的纳米级深度剖面

通过四点探针 (4PP)、差分霍尔效应计量 (DHEM)、二次离子质谱 (SIMS) 和透射电子显微镜 (TEM) 技术评估了磷 (P) 注入 p 型硅衬底的电性能和微观结构，在 RTA 750–950°C 和 CO ₂激光 120–140W 退火后。当 RTA 温度升高时，a-Si/c-Si 界面处的缺陷浓度逐渐消失。对于 CO ₂激光退火，发现缺陷在范围末端 (EOR) 区域聚集。由于在 EOR 时缺陷消失，薄层电阻 (Rs) 值随着 RTA 温度的升高而显着降低。对于 CO _2， Rs 没有明显变化 激光退火案例。RTA 温度低于 850°C 时掺杂剂激活率不到 50%，在 950°C 时增加到 70%。对于CO ₂激光退火，无论激光功率如何，活化率都可以达到80%以上。发现最高活性浓度和最低电阻率或迁移率位于表面的顶部 20 nm 区域内。尽管 RTA 退火条件显着影响了掺杂剂扩散和由此产生的电性能深度分布，但深度分布并没有随着 CO _{2 的}变化而发生很大变化 激光功率水平。结果表明，DHEM 数据与 SIMS 和 TEM 数据相结合，可成功用于详细评估金属氧化物半导体场效应晶体管 (MOSFET) 应用中超浅结的电性能。