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Threading dislocations in GaN high-voltage switches
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2021-08-05 , DOI: 10.1016/j.microrel.2021.114336
Brett Setera 1 , Aristos Christou 1
Affiliation  

Thick epitaxial GaN power switching devices are known to contain a high density of crystal defects, especially threading dislocations in the epitaxial layer. The impact of these defects on device performance is a topic of ongoing research. This paper presents a review on the current understanding of the impact of dislocations on leakage current, blocking voltage, peak electric field, switching frequency, and dynamic ON resistance. The effects of substrate type on dislocation density are also discussed for optimization of switching two terminal devices.



中文翻译:

GaN 高压开关中的螺纹位错

众所周知,厚外延 GaN 功率开关器件包含高密度的晶体缺陷,尤其是外延层中的穿透位错。这些缺陷对器件性能的影响是正在进行的研究课题。本文综述了目前对位错对漏电流、阻断电压、峰值电场、开关频率和动态导通电阻影响的理解。还讨论了衬底类型对位错密度的影响,以优化切换两个终端器件。

更新日期:2021-08-05
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