We report anisotropic magnetocaloric effect and magnetoresistance in antiferromagnetic HoNiGe₃ single crystal grown by Ge flux method. HoNiGe₃ single crystal exhibits antiferromagnetic order and large magnetocrystalline anisotropy below the Néel temperature T_N = 10.5 K. Meanwhile, with increasing the magnetic field, HoNiGe₃ undergoes the spin-flip transition induced by the magnetic field along the a axis, while the spin-flop transition occurs for the field along the other orientations, which gives rise to anisotropic magnetoresistance behavior along three axes. With the magnetic field change of 0–50 kOe, the maximum magnetic entropy changes obtained along the a, b, and c axes are −13.9, 2.5 and −7.7 J kg⁻¹K⁻¹, respectively. The maximum rotating magnetic entropy change is −12.3 J kg⁻¹K⁻¹ under 50 kOe by rotating the magnetic field from the b axis to the a axis, and the corresponding refrigeration capacity is 193 J/kg, which demonstrates HoNiGe₃ to be an attractive candidate for novel rotating magnetic refrigeration at low temperature region.

我们报告了通过 Ge 通量方法生长的反铁磁 HoNiGe ₃单晶的各向异性磁热效应和磁阻。HoNiGe ₃单晶显示出下面的奈耳温度的反铁磁顺序和大的磁晶各向异性Ť _Ñ  = 10.5 K.同时，随着磁场，HoNiGe ₃经历自旋反转过渡通过沿着所述磁场感应一个轴，而旋沿其他方向的场发生 - 触发器转变，这会导致沿三个轴的各向异性磁阻行为。随着磁场变化 0-50 kOe，沿a获得的最大磁熵变化，b和c轴分别为-13.9、2.5 和-7.7 J kg ^-1 K ^-1。将磁场从b轴旋转到a轴，在 50 kOe 下的最大旋转磁熵变化为 -12.3 J kg ^-1 K ^-1，相应的制冷量为 193 J/kg，这表明 HoNiGe ₃为低温区域新型旋转磁制冷的有吸引力的候选者。