Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect,Nano-Micro Letters

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Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
Nano-Micro Letters ( IF 26.6 ) Pub Date : 2021-08-03 , DOI: 10.1007/s40820-021-00694-4
Kun Liang _{1,

2} , Dingwei Li _{1,

2} , Huihui Ren _{1,

2} , Momo Zhao _{1,

3} , Hong Wang ₃ , Mengfan Ding ₄ , Guangwei Xu ₄ , Xiaolong Zhao ₄ , Shibing Long ₄ , Siyuan Zhu ₅ , Pei Sheng ₅ , Wenbin Li _{1,

6} , Xiao Lin ₇ , Bowen Zhu _{1,

6}

Affiliation

Fully inkjet-printed transparent high-performance thin-film transistors (TFTs) with ultrathin indium tin oxide (ITO) as semiconducting channels were achieved.
The energy band alignment at ITO/Al₂O₃ channel/dielectric interface was investigated by in-depth spectroscopy analysis.
Fully printed n-type metal–oxide–semiconductor inverters based on ITO TFTs exhibited extremely high gain of 181 at a low-supply voltage of 3 V, promising for applications in advanced electronic devices and circuits.