MoO\(_3\)/In/Cu/In/MoO\(_3\) thin film has been deposited on glass substrate by a thermal evaporation method. To identify the optimal structure with the highest figure of merit, we investigated the effect of the MoO\(_3\), Cu, and In thicknesses on the physical and electrooptical properties of the thin film. The experimental results indicated that, when decreasing the thickness of the MoO\(_3\) top layer, the sheet resistance of the thin film decreased. In addition, we found that the surface roughness strongly depended on the copper thickness. The best maximum figure of merit achieved was \(3.89\times 10^{-3}\) \(\Omega ^{-1}\) for an indium thickness of 4 nm, copper thickness of 8 nm, and MoO\(_3\) bottom and top layer thicknesses of 20 nm and 35 nm, respectively.

MoO \(_3\) /In/Cu/In/MoO \(_3\)薄膜已通过热蒸发方法沉积在玻璃基板上。为了确定具有最高品质因数的最佳结构，我们研究了 MoO \(_3\)、Cu 和 In 厚度对薄膜物理和电光性能的影响。实验结果表明，随着MoO \(_3\)顶层厚度的减小，薄膜的薄层电阻降低。此外，我们发现表面粗糙度很大程度上取决于铜的厚度。实现的优点的最好最大数字是\（3.89 \乘以10 ^ { - 3} \） \（\欧米茄^ { - 1} \）为4纳米，为8nm铜厚度的铟的厚度，和的MoO\(_3\)底层和顶层厚度分别为 20 nm 和 35 nm。