In recent years, the world has witnessed a huge technological revolution in terms of manufacturing electronic devices and reducing their size, which has reached nanoscale. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one of these devices. However, with its downsizing, it affects the efficiency of its associated devices due to the generated heat. In this paper, two-dimensional heat transfer inside a Silicon on Insulator (SOI) MOSFET and traditional MOS transistor is investigated using the Lattice Boltzmann Method (LBM) . It was found that the temperature reaches 340 K and 332 K for SOI-MOSFET and MOSFET at a Knudsen number (Kn=$\mathit{\Lambda }$/L${}_c$) of 10, respectively, while the heat flux reaches 21.5 $\times$ 10${}^{11}$ W/m${}^2$ for SOI transistor and 18.7 $\times$ 10${}^{11}$ W/m${}^2$for MOS device. The insulating layer (SiO${}_2$)in the SOI transistor restrains heat release in the channel region. So, the conventional MOSFET at Kn =10 is thermally more stable, compared to SOI-MOSFET.

近年来，世界在制造电子设备和缩小其尺寸方面发生​​了巨大的技术革命，已经达到纳米级。金属氧化物半导体场效应晶体管 (MOSFET) 就是这些器件之一。然而，随着尺寸的缩小，它会因产生的热量而影响其相关设备的效率。在本文中，使用格子玻尔兹曼方法 (LBM) 研究了绝缘体上硅 (SOI) MOSFET 和传统 MOS 晶体管内部的二维热传递。发现 SOI-MOSFET 和 MOSFET 在 Knudsen 数 ( Kn=$\mathit{\Lambda }$/L${}_C$) 分别为 10，而热通量达到 21.5 $\times$ 10${}^{11}$ 瓦/米${}^2$ 用于 SOI 晶体管和 18.7 $\times$ 10${}^{11}$ 瓦/米${}^2$对于 MOS 器件。绝缘层（SiO${}_2$) 在 SOI 晶体管中抑制了沟道区的热释放。因此，与 SOI-MOSFET 相比，Kn = 10的传统 MOSFET 在热上更稳定。